Crossbar reached prototype phase rram production




Crossbar reached prototype phase rram production

The American company Crossbar has entered his first prototypes of resistive memory, also known as rram, to start producing. This type of memory should be faster and more reliable than flash memory, as the company promises.

Crossbar takes its name from the building are resistive RAM memory that is built from square superposed electrodes, reminiscent of sleepers. Between the two electrodes, when a voltage is applied, a conductive channel is formed: forming a memory cell. That remains intact when no voltage in the memory, which makes rram suitable for storage of data. Crossbar has in a commercial chip maker to make his first chips so says the company.

According to their Crossbar rram compared with nand memory only half of the space to achieve the same capacity. In addition, it would be very easy to stack in order to increase without reducing the size of chips to allow take capacity still further. On a single 200mm ² chip could be. One terabyte of data stored The memory could be. Include storage used in products such as SSDs, tablets and other mobile devices

The rram would not only enable higher capacities on smaller chips, but would also agree economical than nand memory. Crossbar claims it is up to twenty times more efficient than their developed nand memory. Also, the speed at which data can be recorded with the same factor would be faster, while the service life would be. Ten times that of the NAND With the production of memory in a standard CMOS process would Crossbar a relatively short time to release a commercial product. Based on its technology Crossbar rram

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