Facts | Memory volatile form will replace the stick




Chinese scientists have created a new eco-friendly alloy for electronics. 50 aluminum atoms are bonded to 50 atoms of antimony. This alloy can potentially be used in non-volatile computer memory a new generation of “variable phase» («phase-change»). According to a publication in a scientific journal Applied Physics Letters, referred to by the network messenger science e! Science News, the technology could be used in future data storage devices.

Memory “variable phase” could replace received widespread flash memory based on the following principles .

Memory “variable phase” is based on materials that are able to change shape. An electric pulse from the shapeless they become crystalline. This material in its amorphous state has high electrical resistance and low resistance in the crystalline state. These two states correspond to “1” and “0” in binary.

Flash memory is not too suitable for less than 20 nanometer units, while memory “variable phase” may be less than 10 nanometer. This will accommodate more storage capacity in less space.

The representative of the Shanghai Institute of Microsystems and Information Technology Chinese Academy of Sciences Ksilin Zhou said:

This is the most important feature of this type of memory.

He adds that the data very quickly written to the memory of the “variable phase” and its modules will be relatively inexpensive cost.

Until now the most used in the manufacture of this type of memory are compositions comprising germanium, antimony and tellurium. But the need to combine three elements complicated the work on the prospective memory “variable phase”.

Ksilin Zhou explains the nature of the difficulties that researchers have encountered before, to create a new alloy:

It is difficult to control the production process memory “variable phase” on the basis of the ternary alloy, which has traditionally consisted of germanium, antimony and tellurium. Etching and cleaning of chalcogenide material could change its structure due to the motion of atoms of tellurium.

Ksilin Zhou and his colleagues were able to reduce the material composition of the two elements: aluminum and antimony. They examined the ability of the material to change shape. This composition is more heat resistant than the alloy of germanium, antimony and tellurium. Alloy Al50Sb50 has three levels of resistance. This makes it possible to keep three bits of data (rather than two) in a single memory cell of this type. This will use the material in the production of multi-level data storage.

Ideas about what supplant flash memory with a lot of scientists. For example, it is offered to replace the resistive storage .
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