GlobalFoundries will deploy in early 2019 cheap 12nm-fd-soi-process




GlobalFoundries has put the 12nm-fd-soi platform on its roadmap. Beginning in 2019 should take place the first tape outs of chips based on this process. According to the company 12fdx can compete with established FinFET-process programs, at a fraction of the cost.

GlobalFoundries affects the preparations for his 12fdx platform in its Fab 1 in Dresden. The 12nm-process succeeds 22fdx that GlobalFoundries announced last year. That 22nm production will be deployed later this year to test production, followed by mass production in 2017.

According GlobalFoundries is 12nm-fully-depleted Silicon-on-insulator platform able to compete against 2019 with the, by then long and broad-based, 10nm FinFET-process-in terms of performance, but at much lower cost. The performance would fall 15 percent higher than the current-FinFET technologies, at the half of consumption. GlobalFoundries currently working with a 14nm FinFET process for high-endchips, which include going to be used for AMD’s upcoming Zen processors.

The 22nm- and 12nm-soi production is particularly suitable for simple chips such as those for the Internet-of-things and networking. For large, complex chip designs such as the socs for smartphones FinFET is a better choice, thanks to the improved performance. In silicon-on-insulator-technology, there is an additional layer of oxide is applied on each conductive element, so that all the electron paths are isolated from each other. The technique has its origins at IBM, but was later further developed by STMicroelectronics first and now GlobalFoundries and Samsung.


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