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Imec develops nanowire transistors with gate round
Employees of having transistors based on nanowires made in Leuven-based research institute IMEC, wherein the gate completely encloses the nanowire. This type of transistor would be a good candidate for chip production at 5nm.
The new transistors, which are called gaa-nwfets, can be produced, both horizontally and vertically. Gaa-nwfets is an abbreviation of gate all round nanowire field effect transistors. They can be produced with simple steps and provide good electrical properties, such as low noise, and, thanks to their design, without junctions, they are robust and simple to produce. Moreover, they would have low leakage current, a feature which already provides for great energy savings in Trigate-transistors. Many transistors make use of junctions, or transitions, between negatively and positively charged semiconductors, so-called pn or np-junctions.
The nanowires in the GAA-nwfets be by means of doping, and the controlling dimensions are tuned for the desired performance. Thus, they can not only be used for processors and memory, but also for analog and RF applications. For use in the SRAM cells imec researchers have devised a new structure in which two stacked vertical transistors are used in the same channel doping. This could reduce the size of SRAM cells with 39 per cent compared to traditional building, which would allow for higher densities. Both the horizontal and vertical transistors can be made together on a 300mm silicon wafer.
Transistor Evolution to gaafetViewing:-150
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