Micron is working on tlc NAND chip 768Gbit




Micron is working on a NAND memory chip of 768Gbit with an area of 2 179,2mm. The chip thus has a higher storage density than current 256Gbit chip from Samsung. Micron does not yet know whether the chip actually reaches the market.

The 3D NAND chip Micron offers maximum sequential read speed of 800MB / s and write speeds of 44MB / s. Covering an area of ​​179,2mm² and storage capacity of 768Gbit chip has a storage density of 4,29Gbit / mm². It involves a 3-D chip wherein the controller is placed under the flash chips. Micron was held during the last week Solid-State Circuits Conference they were working on the chip, but let there claimed to know have not yet decided whether the design actually reaches the market eetimes.

Micron makes use of floating gate transistors in the tlc-memory cells. This is the most common type of transistor for planar NAND flash, but Samsung uses for its 3D V-NAND are proprietary charge-kick -geheugencellen. Analysts claim eetimes compared to Samsung’s method is more expensive and complex than the traditional floating-gate technology. In the floating-gate transistors, the electrons stored in the conductive layer of the floating gate, in the batch step in the insulating layer to a channel, wherein the Samsung design applying vertical and makes use of interconnect vias by the memory layers.

Microns chip would have a relatively large block size of 96MB, and do not disclose and provide partial erasing of the memory blocks. This entails disadvantages for efficient memory management, the use of trim, and, ultimately, for the speed.

Memory manufacturers are engaged in a race to increase the data density and to keep costs under control. It is Samsung’s strategy to increase the number of layers of its 3D-V-nand; The company currently brings memory chips of 48 layers and 100 claims were to stack. Toshiba / Sandisk’s 48-layer 256Gbit TLC-ready and could sit on 768Gbit end of 2017 with his BiCS technology. SK Hynix would start in 2016 to produce 48-layer 256Gbit-tlc.

Update, 17:15: The article said incorrectly that the writing of the Micron chip 53MB / s, but must be 44 MB / s.

Micron 3d nand 768Gb
Product Surface storage Density
Samsung V-mlc nand 128Gbit 24 Layer 133mm² 0,96Gbit / mm²
Samsung V 128Gbit NAND-tlc 32 Layer 68,9mm² 1,85Gbit / mm²
Samsung V 256Gbit NAND-tlc 48 Layer 97,6mm² 2,6Gbit / mm²
Micron 2D-mlc nand 128Gbit 147mm² 0,87Gbit / mm²
Micron 3D 384Gbit NAND-tlc 168,5mm² 2,28Gbit / mm²
Micron 3D 768Gbit NAND-tlc (prototype) 179,2mm² 4,29Gbit / mm²
3D-NAND strata Capacity Production / Availability
SK Hynix 3D nand 36 128Gbit (MLC) Q4 2015/2016
SK Hynix 3D nand 48 256Gbit (tlc) Q1 2016 /?
Samsung V-nand Gen 3 48 256Gbit (tlc) August 2015 /?
Samsung V-nand Gen 2 32 86 / 128Gbit (MLC)
128Gbit (tlc) May 2014 / H2 2014
Samsung V-nand Gen 1 24 128Gbit (MLC) August 2013 / H2 2013
Toshiba / SanDisk BiCS 48 128Gbit (MLC) H2 2015/2016
Toshiba / SanDisk BiCS 48 256Gbit (tlc) H1 2016/2016
Intel / Micron 3D nand 32 256Gbit (MLC)
384Gbit (tlc) Q4 2015/2016
Latest figures: in October 2015, source: Computer Base


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