Quantum Transistors memory cells to accelerate




Chinese researchers have developed a method to display. Transistors used in memory cells a significant acceleration They make use of transistors in transistors.

The transistors used in memory cells, as in nand chips for solid state drives, approaching gradually their physical limits. The transistors can not be made ​​smaller and smaller before unwanted effects reduce the reliability of the stored data. A group of researchers from the Chinese Fudan University does, however, a way were found to have to make. the transistors which are used in flash memory, faster

They do so by a transistor in the transistors of the memory cells to build. The embedded transistor, the gate of the transistors to open and close faster, the speed of the whole must increase. The Chinese applied their technique to floating gate mosfets. A small tunneling FET is used as a gate. Tfets that require less time to build than mosfets, a charge because they work with quantum tunneling effects. Where a traditional transistor on time to build up a charge before the gate can be opened or closed, which happens when tfets much faster.

The mosfets can switch if not only faster, but also more economical, as the investigation of Fudan employees. The tfets can only switch in a nanosecond and bleach light-sensitive. That would also make them suitable for fast image sensors. In addition, installing the tfets in mosfets hardly require an adjustment in production, so the technique could be. Implemented quickly SFG-geheugencel


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