Researchers at Eindhoven University of Technology MRAM make efficient

Mar

7

2016

Physicists from the Eindhoven University of Technology have figured out a way to make MRAM more energy efficient and faster. MRAM has been the great promise but still has some obstacles. A major obstacle is that the switching of bits requires a lot of power.

The latter now seems overcome by the use of a curving stream. In addition, the new design is much faster. “With MRAM, the write current is only effective after a few nanoseconds,” explains lead researcher Arno van den Brink from Tweakers. “With this technique get immediate impact of the write current, so you can basically switch in less than a heartbeat. It further improves alternative flow both the power and the life of the bits.”

MRAM, or magnetoresistive memory, stores data by making use of the spin of electrons. Because the magnetic storage place and not electric, it is permanent. Thereby MRAM combines the durability of magnetic storage with the speed of DRAM or SRAM and is seen as the successor of these memory types and flash memory.

“In the current design of MRAM you have a free magnetic layer and a reference layer,” Van den Brink continues. “In between is a layer about to write that cell a nanometer thick with high resistivity., You must go through that layer with high resistance. This not only leads to more energy consumption, but also to increased wear. We will send the circuit the layers through. ”

“Next, a bit is written by deflecting electrons that have the proper spin. Until recently, worked out that only in a magnetic field, but we have been able to eliminate by an antiferromagnetic adding low.”

The entire study is described in Nature Communications.

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