Samsung announces fourth-generation V-NAND memory and 32TB SSD-in 2.5 “format to

Aug

11

2016

Samsung has announced the fourth generation of its 3D V-NAND memory. With the new tlc-NAND memory consisting of 64 layers, of 512Gbit chips can be made. Samsung will use these chips include a 32TB SSD-in 2.5 “format.

Samsung has the fourth-generation V Nand announced the Flash Memmory Summit Conference. The capacity per memory chip is doubled compared to the previous generation, which consists of 48 layers and 256GB chips possible. Those chips from the third generation, which Samsung announced last year at FMS, for example, be used in the 4TB version of the Samsung 850 EVO SSD.

In the fourth quarter of this year, the first products to come to market with the new V-Nand. Samsung could theoretically use the new chips to bring m2-SSD up to 8TB on the market with a storage capacity, but plans before the South Korean manufacturer has not yet announced. According to Samsung will help chip manufacturers to make “faster, more stylish and portable devices. Thus the manufacturer indicates that the memory chips will be used in devices such as laptops and tablets.

Samsung’s new chips themselves in any case, to create a 32TB-SSD for enterprise applications. It is a 2.5 “-ssd with SAS connector, which should come out in 2017. Samsung will stack the 512Gbit NAND-chips in sixteen layers, which together form a package of 1TB. By combining 32 of these packages it is possible to 32TB of storage capacity in a 2.5 “drive to eliminate.

The 32TB-SSD is probably the successor of the PM1633a , a 2.5 “-ssd with a capacity of 15,36TB which is marketed by Samsung this year on the market. Samsung thinks SSDs with a capacity of 100TB in 2020 can making on the basis of further improvements in 3D V-NAND memory. Seagate showed earlier in the Flash memory Summit conference a prototype-60TB sSD, but that manufacturer uses the larger 3.5 “-formfactor. Seagate also has no concrete plans for the placing on the market of the SSD.

Samsung also announced the arrival of the ‘Z SSDs to, without having to surrender many technical details. According to Samsung, it is a SSD that makes use of a variant of V-NAND, but has a modified controller which allows for higher speeds. The sequential read rate was thus 1.6 times faster than that of nvme-SSD’s. According to Samsung, the Z-SSD on the market in 2017.

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