Samsung first began producing memory chips LPDDR3 3GB

Jul

25

2013

The South Korean company Samsung has officially announced the start of mass production of the world’s first RAM module type LPDDR3 of 3 GB, performed at rates 20-nanometer manufacturing process. The new chips are aimed at the use of mobile devices in the next generation.

NEW Samsung consists of six 20-nm memory chips such as LPDDR3 density of 4 Gbit enclosed in shell thickness of 0.8 millimeters. Baud rate in the 20-nm chips Samsung reaches 2133 Mbit / s. Dimensions minor memory, leaving more room for the more capacious battery.

This news once again confirms earlier rumors that the smartphone Samsung Galaxy Note 3 get 3 GB of RAM.

Let us recall that not so long ago, SK Hynix has officially announced the creation of the type of memory chips LPDDR3 density 8 Gbps designed to produce at rates the same 20-nm process, on the basis that at the end of this year will be released memory of 4 GB .
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Tags: LPDDR3 , Samsung , Memory .

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