Samsung first began producing memory chips LPDDR3 3GB




The South Korean company Samsung has officially announced the start of mass production of the world’s first RAM module type LPDDR3 of 3 GB, performed at rates 20-nanometer manufacturing process. The new chips are aimed at the use of mobile devices in the next generation.

NEW Samsung consists of six 20-nm memory chips such as LPDDR3 density of 4 Gbit enclosed in shell thickness of 0.8 millimeters. Baud rate in the 20-nm chips Samsung reaches 2133 Mbit / s. Dimensions minor memory, leaving more room for the more capacious battery.

This news once again confirms earlier rumors that the smartphone Samsung Galaxy Note 3 get 3 GB of RAM.

Let us recall that not so long ago, SK Hynix has officially announced the creation of the type of memory chips LPDDR3 density 8 Gbps designed to produce at rates the same 20-nm process, on the basis that at the end of this year will be released memory of 4 GB .
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Tags: LPDDR3 , Samsung , Memory .


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