Samsung starts mass production 10nm-class DDR4

Apr

6

2016

Samsung has announced to start mass production of DDR4 DRAM chips of eight gigabits on a 10nm-class process. This means that it involves chips with a transistor size between ten and nineteen nanometers.

The new memory support according to Samsung a maximum data rate of 3200 megabits per second. That’s about thirty percent faster than the 2400Mbit / s, which is extracted with DDR4 chips made with 20nm-class. Moreover, the chips with the smaller process ten to twenty percent more efficient than the previous generation DDR4 memory and takes the company over thirty percent more chips from a wafer.

Samsung makes the 10nm-class cells by making use of improvements in its own design techniques, including four-fold pattern lithography or QPT and in the production of highly pure non-conductive layers of no more than a few ångströms thick, or thinner than a nanometer.

The Korean company this year expects to be steaming a 10nm-class DRAM DDR4 version available that is designed for smartphones and other mobile devices. Products featuring this year come in the 10nm-class line will range from 4GB to 128GB laptopram-strips for servers. The 2013 started 20nm-class line will also be extended.

Samsung 10nm dram

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