Samsung starts mass production 3d flash memory




Samsung starts mass production 3d flash memory

Samsung has launched its latest generation of flash memory chips put into mass production. The V-nand chips are the first so-called 3D chips from the South Korean company: it consists of several layers of flash chips that are stacked.

With the mass production of the first V-nand memory chips Samsung wants to increase the capacity of its flash chips. Conventional NAND memory is made up of chips that consist of a single layer of transistors. In a chip-package are often multiple chips stacked, but these are loose chips. With the V-nand Samsung integrates multiple layers of transistors in a single chip, which leads to a ‘3 d-chip. Which should enable higher storage capacities include solid state drives.

Samsung’s first mass-produced 3D chip V-nand will have a capacity of 128Gb. The new memory is made possible by two technologies that Samsung developed: ctf and vertical interconnects. That first batch stage flash, hold an electrical charge trapped in the silicon nitride between two active layers nand. This ensures that the load has an effect on neighboring cells. This ensures greater reliability of the written data and also allows faster write speeds.

The vertical interconnects provide the communication between the different layers of transistors or memory cells. These conductive connections make accumulations up to twenty layers possible. The 128Gb chips have to be. In future products, including SSDs, used In the future, Samsung will also start producing. Larger capacities


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