Samsung starts mass production 3D NAND Flash with 3 bits per cell




Samsung has started mass production of its ‘three-dimensional’ v-nand with 3 instead of 2 bits per memory cell. The use of such memory can provide lower costs and cheaper Samsung SSD’s.

Samsung combines 3D v-nand memory and technology based on three bits per memory cell for SSD’s. Samsung is the tlc memory for its second generation of V-nand flash, with 32 instead of 24 vertically stacked layers of cells per nand chip. Each chip is thus on 128Gb or 16GB.

The first consumer SSDs with 3d-nand brought Samsung last summer: the 850 Pro. Stacking layers makes more efficient use of the available space as possible, so it can be used in the same data density relative to recent 21nm- or 19nm production. Use is made of ‘older’ but proven production processes This brings advantages in the field of the service life along with it.

The first SSDs with TLC Samsung were the 840 models, which the company in 2012 released . The biggest advantage is to reduce the cost for Samsung, the manufacturer can get more dies from wafers. The switch can therefore lead to cheaper SSDs. “It 3bit-v-nand will bring the transition of data storage hard drives to ssd’s momentum,” says Jaesoo Han, chief marketing in the field of memory at Samsung Electronics.



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