Samsung starts mass production 4GB hbm2 for video cards

Jan

20

2016

Samsung has started mass production of 4GB dram with hbm2 interface. Compared to the DRAM modules based on the first-generation high bandwidth memory, the bandwidth has been doubled to 256GB / s.

The 4GB DRAM packages on the basis of hbm2 consist of four 8Gbit-slices, which are stacked, and each have about five thousand through silicon via channels, and thus are vertically connected to each other. This year, Samsung also will produce the first 8GB hbm2 modules. The Jedec organization hbm2 last week to standard declared. The standard increases the width of the interface to 1024bit, divided into eight independent channels per dram stack.

The bandwidth of JESD235A as the hbm2 standard officially known, is a maximum of 256GB / s and this is therefore the bandwidth of Samsung’s new packages. The manufacturer emphasizes that the bandwidth is thus doubled with respect to hbm1 and seven times as high as that of 4 Gbit-DDR5-chips. Additionally hbm2 doubles the bandwidth per watt compared to GDDR5, claims Samsung.

Hbm2 is among other things intended for video card memory; AMD uses hbm1 his Fury- Nano and video cards. The expectation is that both AMD and Nvidia hbm2 use of it. In addition to put in the memory for high performance computing, workstations and servers. Compared to gddr5 hbm provides not only a higher bandwidth, but also advantages in the area of ​​the space occupied by it on a video card.

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