Samsung starts mass production sata-ssd’s of 4TB with qlc-nand

Aug

7

2018

Samsung reports the mass production of consumer SSDs with sata interface based on quad-level cell-nand started. Later this year, the manufacturer wants to release 2.5 “versions of the 1TB, 2TB and 4TB SSDs.

Samsung uses 32 1Tb v-nand chips with 64 layers to build up the 4TB drives. The SSDs offer a sequential read speed of 540MB / s and a sequential write speed of 520MB / s, which aligns the performance of the qlc ssds according to the manufacturer with the tlc variants. With the new generation of v-nand, Samsung is also able to efficiently make 128GB memory cards for smartphones.

Samsung does not state on which production process the memory chips are made, only that it concerns the fourth-generation V-nand. Later this year, the company wants to start with the production of fifth-generation V-nand, which must provide higher and more reliable performance and is primarily intended for data centers, servers and enterprise storage.

With its quad-level cell nand, Samsung stores four bits per memory cell, which is an efficient way to offer more capacity for relatively low prices. Increasing the number of bits per memory cell is generally at the expense of performance and lifetime.

Year

Bit

Nodes

Chip capacity

Drive capacity

2006

1-bit slc (single-level cell) 70nm class 4Gb 32GB
2010

2-bit mlc (multi-level cell) 30nm class 32Gb 512GB
2012

3-bit tlc (triple-level cell) 20nm-class 64Gb 500GB
2018

4-bit qlc (quad-level cell)

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