Samsung starts production 3GB lpddr3-dram for smartphones




Samsung has started the production of DDR3 memory 3GB for smartphones and mobile devices. The dram makes use of Samsung 20nm-class 4Gb-lpddr3 chips that operate significantly faster than 30nm-class lpddr3 chips and thereby also energy efficient.

Samsung 4Gb 20nm The lpddr3 memory in 20nm-class has a maximum transfer speed of 2133Mbit / s. This makes it a lot faster than the current generation lpddr3 that a maximum throughput of 1600Mbit / s. In LPDDR2 this was only 800Mbit / s. Samsung has not announced any process on the chips fried be exact. The company shares the chips in a class in what this memory means that the feature size is between 20 and 29nm.

To get the 3GB used Samsung lpddr3 six chips of 4Gb, the total height of the package amounts to 0.8 mm. An executive from Samsung says that will be in high-end smartphones in the second half of this year. 3GB memory used Possible, for example, the memory used for the Galaxy Note III, whose announcement expected in early September in Berlin during the IFA fair is. By the end of this year the company wants to get better with 3GB lpddr3 on the market made up of four 6Gb-lpddr3 chips. For example, can be placed on two stacked chips symmetrically next to each other, thus increasing the performance.


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