Samsung starts with mass production of mram




Samsung has started mass production of emram, or embedded magnetic random access memory . The memory is made on a 28nm process. Mram is a potential successor to both dram and flash.

Samsung states that with the beginning of mass production it has shown that it has overcome the technical obstacles surrounding the 28FDS-based emram and that it is able to further scale up this type of memory. The 28nm- fully-depleted silicone-on-insulator process is a mature production process for chips in which a layer of oxide is applied over the wafer so that the transistors of the silicon base layer are insulated.

Mram stands for magnetoresistive memory and Samsung calls his implementation here embedded mram, or emram. In this type, data is stored by using the spin of electrons. Storage takes place magnetically and not electrically. It is therefore about fast, non-volatile memory without degradation. Data is thus also retained without electricity, while data processing is just as fast as with dram. By combining the durability with the speed of dram or sram, mram is also seen as the successor of these memory types and flash memory.

According to Samsung, the emram produced achieves a writing speed that is about a thousand times faster than with eflash memory. In comparison with eflash, emram can also use a lower voltage, so that it is more economical to use, also because it does not consume power when a device with this memory is switched off.

The South Korean manufacturer says that its emram can provide benefits for all kinds of applications, such as mcu , iot products and artificial intelligence. The manufacturer states that its emram modules are also easy to fit into existing technology.

Samsung says it will complete the tape-out of an emram 1Gbit test chip this year. The term tape-out means the completion of the design phase before the product can go into production.


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