Scientists develop transistor gate of one nanometer




Scientists at UC Berkeley have own words smallest transistor developed so far. They were able to make a transistor with a gate length of 1 nanometer, by making use of material that is also used for lubricants.

The tiny transistor of the researchers contains a gate of molybdenum disulphide, MoS 2, or, an inorganic compound of sulfur and molybdenum, which is primarily known as a part of lubricants. It improves the frictional properties of lubricating grease. In the semiconductor industry makes the material name as an alternative to silicon.

Advantage of MoS 2 is that it is a two-dimensional semiconductor which retains atom in thin layers with a thickness of about 0.65 nanometer its electrical properties. Moreover, the flow of electrons is good to check and manage the MoS 2 thin layers to low leakage currents. These leakage currents are an obstacle to silicon. When transistor gates shorter than 5nm taking the leakage currents to the extent, that the material is not to be put into more efficient on this scale. In other silicon alternatives, such as graphene, the electrons less manageable and are often too difficult to produce on a large scale.

The researchers at Berkeley Labs Division of Materials Science combined their MoS 2-gate with a gate electrode on the basis of a carbon nanotube. This combination exhibits according to the makers excellent switching capabilities. The gate length was in the off approximately 4 nm and a few nanometers in the aanmodus.

The Berkeley team emphasizes that it is a proof-of-concept, which is still not ready to be applied in practice. “This work is important to show that we are no longer limited by the gate of 5 nanometers for our transistors. Moore’s Law is still longer persist through properly develop semiconductor materials and architecture of components,” says Ali Javey Berkeley Labs. He and his colleagues published research in Science under the title “MoS 2 transistors with one-nanometer gate lengths.


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