Scientists replace flash memory terabyte drive resistive




Scientists from the University of California have developed a new storage technology for mobile electronics. It will be used in smartphones, tablets, laptops and digital cameras. It is based on a resistive memory to make memory cells are very small. It operates at high speed and can create greater storage volume than the flash-based technology, which is now the industry standard. For resistive memory storage is common, the capacity of which is calculated in terabytes, not gigabytes, as is now customary. Soon the knowledge of how to operate the flash drive will take place in the history books.

Память будущего

The key technology is the development of nano-“islands” of zinc oxide, placed on a silicon basis. This prevents the second member, referred to as a switching device, in which role playing is often diode.

As the resource e! Science News, has devoted a note of this technology, one of the authors of publications on the subject of the new development Dzhanlin Professor Liu said:

This is a significant step towards the widespread resistive memory in the electronics industry as a replacement for flash memory. This actually simplifies the process and reduces production costs.

Flash memory is not the first decade retains its role as the standard in the electronics industry. But the memory of time to become a more capacious and shrink in size.

Resistive memory is usually characterized by the metal-oxide-metal structure. Scientists have demonstrated alternatively formed of nano “islands” material which is to form the zinc oxide.

The question is, how reliable will be a new type of storage? As is known, the data on the flash drive have a shelf life , and at the very flash has an expiration date .
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Tags: Memory modules , Memory , Flash Memory .


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